This purity is especially suited for the production of single crystal III-V compound semiconductors, such as Indium Phosphide used as substrates for fabrication of integrated circuits or discrete devices such as laser diodes and photo detectors, Certification of 6N5 purity is by OES (optical emission spectroscopy) with GFAA (graphite furnace atomic absorption) being used for quantitative analysis of selected elements.
Size: .125″ Diameter approx.; Random Sized Teardrop Shaped
