Our 6N5WCI (with controlled impurities) indium is refined for use in critical bulk crystal growth and in epitaxial processes including molecular beam (MBE), liquid phase (LPE), and vapor phase (VPE) epitaxy 6N5WCI is tailored for applications requiring the stringent control of impurities which, until now, only a 7N purity level may have provided at higher cost. This is accomplished by holding total metallic impurities to less than .5ppm/weight (by GDMS), with particular attention given to maintaining low levels of elements known to be detrimental to III-V device performance.
